VBsemi Elec · FETs & Power MOSFETs · MPN BSP613P-VB
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
P-Channel 60V 4.8A 2.1W Surface Mount SOT-223