VBsemi Elec BSP321P-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSP321P-VB

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Specifications

Output Capacitance(Coss)51pF
Pd - Power Dissipation6.5W
Configuration-
Gate Charge(Qg)13.2nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)200mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)32pF
Number1 P-Channel
Input Capacitance(Ciss)819pF

Technical details

6.5W 100V 2V 200mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS

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