VBsemi Elec · FETs & Power MOSFETs · MPN BSP250,135-VB
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| Output Capacitance(Coss) | 120pF |
|---|---|
| Pd - Power Dissipation | 4.2W |
| Configuration | - |
| Gate Charge(Qg) | 9.8nC |
| Drain to Source Voltage | 35V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 970pF |
4.2W 35V 1.8V 40mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS