VBsemi Elec · FETs & Power MOSFETs · MPN BSP225,115-VB
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| Output Capacitance(Coss) | 94pF |
|---|---|
| Pd - Power Dissipation | 3.1W |
| Configuration | - |
| Gate Charge(Qg) | 8.7nC |
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 200pF |
3.1W 250V 2V 1.2Ω@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS