VBsemi Elec BSP220,115-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSP220,115-VB

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Specifications

Output Capacitance(Coss)28pF
Pd - Power Dissipation1.45W
Configuration-
Gate Charge(Qg)8nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)800mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 P-Channel
Input Capacitance(Ciss)370pF

Technical details

1.45W 200V 2.5V 800mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS

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