VBsemi Elec BSP170P-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSP170P-VB

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
TypeP-Channel

Technical details

P-Channel 60V 7A 2.1W Surface Mount SOT-223

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