VBsemi Elec BSP126,115-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSP126,115-VB

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Specifications

Output Capacitance(Coss)42pF
Pd - Power Dissipation3.1W
Configuration-
Drain to Source Voltage250V
Gate Charge(Qg)8.2nC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
RDS(on)2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)9.6pF
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

3.1W 250V 2V 2Ω@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS

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