VBsemi Elec BSP123-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSP123-VB

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.3W
RDS(on)100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)5.3pF
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 100V 5A 3.3W Surface Mount SOT-223

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