VBsemi Elec · FETs & Power MOSFETs · MPN BSC200P03LS G-VB
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 47.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.62nF |
| Type | P-Channel |
P-Channel 30V 47.3A 3.1W Surface Mount DFN5x6-8