VBsemi Elec BSC117N08NS5-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSC117N08NS5-VB

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)86nC@10V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)1.1nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)6.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 80V 60A 104W Surface Mount DFN5x6-8

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