VBsemi Elec BSC057N03MS G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSC057N03MS G-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)71nC@10V
Output Capacitance(Coss)1.025nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation210W
RDS(on)5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)970pF
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 30V 120A 210W Surface Mount DFN5x6-8

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