VBsemi Elec · FETs & Power MOSFETs · MPN BSC046N02KSG-VB
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 1.8mΩ@10V;2.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.9nF |
| Type | N-Channel |
N-Channel 30V 33A 3.75W Surface Mount DFN-8-EP(5x6)