VBsemi Elec BSC031N06NS3 G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSC031N06NS3 G-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation136W
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)225pF
Input Capacitance(Ciss)2.65nF
TypeN-Channel

Technical details

N-Channel 60V 100A 136W Surface Mount DFN5x6-8

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