VBsemi Elec BSC030N03MS G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSC030N03MS G-VB

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Specifications

Gate Charge(Qg)31nC
Drain to Source Voltage30V
Output Capacitance(Coss)425pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))820mV
Pd - Power Dissipation155W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.18nF
Vgs±20V

Technical details

N-Channel 30V 50A 155W Surface Mount DFN5x6-8

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