VBsemi Elec BSC027N10NS5ATMA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN BSC027N10NS5ATMA1-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)84nC@10V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)135A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
RDS(on)3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Input Capacitance(Ciss)7.6nF
TypeN-Channel

Technical details

N-Channel 100V 135A Surface Mount DFN5x6-8

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