VBsemi Elec · FETs & Power MOSFETs · MPN BSC022N03S G-VB
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| Gate Charge(Qg) | 82nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.725nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.9nF |
| Type | N-Channel |
N-Channel 30V Surface Mount DFN5x6-8