VBsemi Elec · FETs & Power MOSFETs · MPN BSC019N04NS G-VB
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| Gate Charge(Qg) | 78nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 610pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.75nF |
| Type | N-Channel |
N-Channel 40V 120A 83W Surface Mount DFN5x6-8