VBsemi Elec AP9972GI-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP9972GI-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation136W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)225pF
Input Capacitance(Ciss)2.65nF
TypeN-Channel

Technical details

N-Channel 60V 70A 136W Through Hole TO-220F

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