VBsemi Elec AP83T02GH-HF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP83T02GH-HF-VB

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Specifications

Gate Charge(Qg)151nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.525nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation235W
Reverse Transfer Capacitance (Crss@Vds)770pF
RDS(on)2mΩ@10V;3mΩ@4.5V
Input Capacitance(Ciss)5.201nF
TypeN-Channel

Technical details

N-Channel 30V 100A 235W Surface Mount TO-252

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