VBsemi Elec AP7811M-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP7811M-VB

No reviews yet — be the first to review VBsemi Elec AP7811M-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6.1nC@10V
Output Capacitance(Coss)165pF
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation4.1W
RDS(on)11mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)73pF
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

N-Channel 30V 13A 4.1W Surface Mount SO-8

Related FETs & Power MOSFETs