VBsemi Elec AP7811GM-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP7811GM-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)27.5nC@10V
Output Capacitance(Coss)745pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation45W
RDS(on)5.6mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)315pF
Number1 N-channel
Input Capacitance(Ciss)3.7nF
TypeN-Channel

Technical details

N-Channel 20V 20A 45W Surface Mount SO-8

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