VBsemi Elec AP70T03GH-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP70T03GH-VB

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Specifications

Gate Charge(Qg)61nC@10V;31.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))1V;2.5V
Pd - Power Dissipation205W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.201nF
TypeN-Channel

Technical details

N-Channel 30V 80A Surface Mount TO-252

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