VBsemi Elec AP4513GM-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP4513GM-VB

No reviews yet — be the first to review VBsemi Elec AP4513GM-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18.5nC@10V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.28W
RDS(on)50mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)57pF
Input Capacitance(Ciss)620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 8A 1.28W Surface Mount SO-8

Related FETs & Power MOSFETs