VBsemi Elec · FETs & Power MOSFETs · MPN AP4509AGM-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 254pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.515nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 11A 3W Surface Mount SO-8