VBsemi Elec · FETs & Power MOSFETs · MPN AP4506GEM-VB
No reviews yet — be the first to review VBsemi Elec AP4506GEM-VB.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 18.5nC@10V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 115pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| RDS(on) | 50mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 620pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8