VBsemi Elec · FETs & Power MOSFETs · MPN AP4506GEH-VB
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 84pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 79pF |
| RDS(on) | 60mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 60V 35A 50W Surface Mount TO-252-4L