VBsemi Elec AP4503GM-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP4503GM-VB

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Specifications

Output Capacitance(Coss)95pF;115pF
Pd - Power Dissipation1.28W
Gate Charge(Qg)5.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)18mΩ@10V;40mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF
Vgs±20V

Technical details

1.28W 30V 6.8A 2V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS

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