VBsemi Elec · FETs & Power MOSFETs · MPN AP40T10GI-VB
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 130nC |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 480pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 360W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 34mΩ@10V |
| Input Capacitance(Ciss) | 5.1nF |
| Type | N-Channel |
N-Channel 100V 50A 360W Through Hole TO-220F