VBsemi Elec AP40T03GP-HF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP40T03GP-HF-VB

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation120W
RDS(on)6mΩ@10V;9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)370pF
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

N-Channel 30V 80A 120W Through Hole TO-220AB

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