VBsemi Elec · FETs & Power MOSFETs · MPN AP40P03GJ-VB
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| Gate Charge(Qg) | 33nC@10V;18nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 7mΩ@10V;9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
N-Channel 30V 50A Through Hole TO-251