VBsemi Elec AP40N03H-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP40N03H-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)525pF
Current - Continuous Drain(Id)70A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
RDS(on)7mΩ@10V;9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)370pF
Number1 N-channel
Input Capacitance(Ciss)2.201nF
TypeN-Channel

Technical details

30V 70A 2V 100W 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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