VBsemi Elec AP2R403GMT-HF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP2R403GMT-HF-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)82nC@10V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation90W
RDS(on)2.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)970pF
Number1 N-channel
Input Capacitance(Ciss)9.9nF
TypeN-Channel

Technical details

N-Channel 30V 160A 90W Surface Mount DFN5x6-8

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