VBsemi Elec AP2304AN-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AP2304AN-VB

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation1.7W
RDS(on)30mΩ@10V;33mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)17pF
Number1 N-channel
Input Capacitance(Ciss)335pF
TypeN-Channel

Technical details

N-Channel 30V 6.5A 1.7W Surface Mount SOT-23(TO-236)

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