VBsemi Elec AONR66406-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AONR66406-VB

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)9.8nC@4.5V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)6.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.33nF

Technical details

N-Channel 40V 40A 33W Surface Mount DFN-8(3x3)

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