VBsemi Elec AOD603A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AOD603A-VB

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Specifications

Gate Charge(Qg)9nC@4.5V;10nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)84pF
Current - Continuous Drain(Id)35A
Gate Threshold Voltage (Vgs(th))1V;3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)79pF;60pF
RDS(on)30mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.5nF;1.18nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 35A Surface Mount TO-252-4L

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