VBsemi Elec AOB470L-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AOB470L-VB

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Specifications

Gate Charge(Qg)53.5nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.395nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)6mΩ@10V;10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.33nF
TypeN-Channel

Technical details

N-Channel 80V 120A 370W Surface Mount TO-263(D2PAK)

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