VBsemi Elec AO8801-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO8801-VB

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Specifications

Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)4.1A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.14W
RDS(on)36mΩ@10V;65mΩ@4.5V
Number2 P-Channel
TypeP-Channel

Technical details

P-Channel 30V 4.1A 1.14W Surface Mount TSSOP-8

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