VBsemi Elec AO6801E-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO6801E-VB

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Specifications

Gate Charge(Qg)2.7nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)100mΩ@2.5V
Number2 P-Channel
Input Capacitance(Ciss)210pF
TypeP-Channel

Technical details

P-Channel 20V 4A 1.4W Surface Mount TSOP-6

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