VBsemi Elec · FETs & Power MOSFETs · MPN AO6409-VB
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| Gate Charge(Qg) | 5.1nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 450pF |
P-Channel 30V 4.1A 2W Surface Mount TSOP-6