VBsemi Elec AO5401E-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO5401E-VB

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Specifications

Gate Charge(Qg)1.65nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)550mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation190mW
RDS(on)450mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)10pF
Input Capacitance(Ciss)45pF
TypeP-Channel

Technical details

P-Channel 20V 550mA 190mW Surface Mount SC-75

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