VBsemi Elec AO4944-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO4944-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)14.5nC@10V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)8.5A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
RDS(on)16mΩ@10V;20mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)86pF
Number2 N-Channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

30V 8.5A 2.5V 3.1W 2 N-Channel N-Channel SO-8 Single FETs, MOSFETs RoHS

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