VBsemi Elec · FETs & Power MOSFETs · MPN AO4900-VB
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 117pF |
| Current - Continuous Drain(Id) | 8A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 8mΩ@10V;12mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 586pF |
| Type | N-Channel |
30V 8A 2.5V 2W 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS