VBsemi Elec AO4800B-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO4800B-VB

No reviews yet — be the first to review VBsemi Elec AO4800B-VB.

Specifications

Configuration-
Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)117pF
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)22mΩ@10V;26mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)586pF

Technical details

N-Channel Array 30V 6.2A Surface Mount SO-8

Related FETs & Power MOSFETs