VBsemi Elec AO4627-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO4627-VB

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Specifications

Gate Charge(Qg)6nC@10V;41.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)95pF;115pF
Current - Continuous Drain(Id)6.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)33pF;57pF
RDS(on)18mΩ@10V;40mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)510pF;620pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 6.8A 2W Surface Mount SO-8

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