VBsemi Elec AO4614B&40V-VB

VBsemi Elec · FETs & Power MOSFETs · MPN AO4614B&40V-VB

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Specifications

Gate Charge(Qg)14.5nC@30V
Drain to Source Voltage60V
Output Capacitance(Coss)75pF;95pF
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)26mΩ@10V;55mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)665pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 60V 5.3A 2W Surface Mount SO-8

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