VBsemi Elec · FETs & Power MOSFETs · MPN AO4449-VB
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 42mΩ@10V |
| Number | 1 P-Channel |
| Vgs | ±20V |
| Type | P-Channel |
P-Channel 30V 5.8A 2.5W Surface Mount SO-8