VBsemi Elec · FETs & Power MOSFETs · MPN AO3415C-VB
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| Output Capacitance(Coss) | 335pF |
|---|---|
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 13nC |
| Drain to Source Voltage | 20V |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 870pF |
2W 20V 1V 34mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS