VBsemi Elec · FETs & Power MOSFETs · MPN ACE3401BBM+H-VB
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| Gate Charge(Qg) | 11.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 54mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.295nF |
| Type | P-Channel |
30V 5.6A 2V 2.5W 54mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS