VBsemi Elec 8N65-VB TO220F

VBsemi Elec · FETs & Power MOSFETs · MPN 8N65-VB TO220F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)120pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation83W
RDS(on)1.1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)860pF
TypeN-Channel

Technical details

N-Channel 650V 7A 83W Through Hole TO-220F

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