VBsemi Elec · FETs & Power MOSFETs · MPN 86T02GH-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 151nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 1.525nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 235W |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF |
| RDS(on) | 2mΩ@10V;3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.201nF |
| Type | N-Channel |
N-Channel 30V 100A 235W Surface Mount TO-252